On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes
Plasma Study
Plasma-kg
conductedBy
- Ecke, Ramona Person
- Haase, Micha Person
- Lang, Norbert Person
- Melzer, Marcel Person
- Schulz, Stefan Person
- Zimmermann, Sven Person
- van Helden, Jean-Pierre Person
hasMedium
hasOutput
hasPlasmaSource
- Centura 5200, Applied Materials Plasma Source
hasTarget
- Porous SiOCH layer Target
- Si Wafer Target
hasTopic
- ULK damage Research Topic
- dry etching Research Topic
- polymer deposition Research Topic
- ultra low-k etching Research Topic
investigates
involves
- CF4 Medium
- Fluorocarbon-based plasma (CF4/CHF3/Ar) Plasma
usesConfiguration
- Configuration for Centura 5200: Radio frequency (RF) excitation at 13.56 MHz; RF power 600 W; Chamber wall temperature 288 K; Substrate temperature 288 K; Total gas flow 100 sccm; Total pressure 100 mTorr
- Configuration for Q-MACS process fiber system: Effective absorption length 5.4 m (12 passes); Time resolution 1 Hz; Absorption detection range 1030.90 cm-1 - 1031.00 cm-1
- Configuration for SE850 system: Incident angles 50°, 60°, and 70°; Wavelength range 400-850 nm
- Configuration for XPS setup: Pass energy 200 eV; Monochromatic Al-Kα radiation; Charging compensation with electron flood gun (Si 2p peak shifted to 103.5 eV)
usesDevice
- MX 650 X-ray source, VG Scienta Diagnostic Device
- Q-MACS process fiber system, neoplas control Diagnostic Device
- R3000 electron energy analyzer, VG Scienta Diagnostic Device
- SE850 system, Sentech Diagnostic Device
- mulitpass optics, neoplas control Diagnostic Device
usesMaterialEntity
- Al wafer
- CF4 Medium
- Si Wafer Target
- ULK samples
usesMethod
- Magnetic enhanced reactive ion etch (MERIE) Method
- Quantum Cascade Laser Absorption Spectroscopy (QCLAS) Diagnostic Method
- Variable angle spectroscopic ellipsometry (VASE) Diagnostic Method
- X-ray photoelectron spectroscopy (XPS) Diagnostic Method