Plasma-kg

diagnosedUsing

• Variable angle spectroscopic ellipsometry (VASE)  Diagnostic Method
• X-ray photoelectron spectroscopy (XPS)  Diagnostic Method

hasProperty

• Properties of porous SiOCH layer: Thickness 500 nm; Dielectric constant 2.4 

partOf

• 300 mm wafer 
• Si Wafer  Target

targetOf

• On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes  Plasma Study

treatedBy

• Centura 5200, Applied Materials  Plasma Source