Plasma-kg

consistsOf

• Porous SiOCH layer  Target
• Si 

diagnosedUsing

• MX 650 X-ray source, VG Scienta  Diagnostic Device
• R3000 electron energy analyzer, VG Scienta  Diagnostic Device
• SE850 system, Sentech  Diagnostic Device

diagnosedUsing

• Variable angle spectroscopic ellipsometry (VASE)  Diagnostic Method
• X-ray photoelectron spectroscopy (XPS)  Diagnostic Method

partOf

• 300 mm wafer 

targetOf

• On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes  Plasma Study

treatedBy

• Centura 5200, Applied Materials  Plasma Source

usedIn

• On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes  Plasma Study