Plasma-kg

consistsOf

• Magnetic enhanced reactive ion etch (MERIE) chamber 

developedBy

• Applied Materials 

generates

• Fluorocarbon-based plasma (CF4/CHF3/Ar)  Plasma

hasApplicationField

• Etching  Application Field
• dry etching  Application Field
• ultra low-k etching  Application Field

hasConfiguration

• Configuration for Centura 5200: Radio frequency (RF) excitation at 13.56 MHz; RF power 600 W; Chamber wall temperature 288 K; Substrate temperature 288 K; Total gas flow 100 sccm; Total pressure 100 mTorr 

hasSpecification

• Specification for Centura 5200: Magnetic enhanced reactive ion etch (MERIE) type; AC; high frequency; low pressure; non-thermal 

plasmaSourceOf

• On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes  Plasma Study

treats

• Porous SiOCH layer  Target
• Si Wafer  Target

usesMedium

• Ar  Medium
• CF4  Medium
• CHF3  Medium