Plasma-kg

hasProperty

• Properties of CF4/CHF3/Ar gas mixture: Total flow 100 sccm; Total pressure 100 mTorr 

involvedIn

• On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes  Plasma Study

mediumOf

• On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes  Plasma Study

partOf

• Fluorocarbon-based plasma (CF4/CHF3/Ar)  Plasma

usedIn

• On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes  Plasma Study

usedIn

• Centura 5200, Applied Materials  Plasma Source